Defects often limit the performance of devices such as light-emitting diodes (LEDs). The mechanisms by which defects annihilate charge carriers are well understood in materials that emit light at red ...
Defects often limit the performance of devices such as light-emitting diodes (LEDs). The mechanisms by which defects annihilate charge carriers are well understood in materials that emit light at red ...
While there are a number of techniques available for profiling surface structures, like scanning electron microscopy and transmission electron microscopy, the advantage Auger spectroscopy has for ...
Indium gallium nitride (InGaN)-based, blue-light-emitting diodes are the backbone of solid-state lighting (SSL). Unfortunately, their efficiency peaks under low current densities (<35 A/cm 2) and ...
What is Auger Electron Spectroscopy (AES)? Analyzing the features of various types of substrates involves the application of the essential analytical technique known as Auger Electron Spectroscopy ...
High-voltage and high-power devices are critical for more efficient and sustainable high-power operations. One candidate for such next-generation devices is bipolar silicon carbide (SiC). SiC devices ...
Bipolar high-voltage devices based on silicon carbide (SiC) have been earmarked as the next big step in the development of more efficient power systems. The efficiency of these devices is largely ...
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