EDN

Are All High Voltage MOSFET and IGBT SPICE Models Created Equal?

Given enough time, most engineers have the right intentions. As an engineer, how often do you want to understand how every part behaves in the circuit application? Yes – check. Are models from ...
Semiconductor Engineering

Integration Of S-Parameters For Power Module Verification Into The Engineers’ Design Environment

Developing a power module requires enhanced design and verification methods. Currently, multiple iterations are needed to get the design done. Today, design and manufacturing processes are heavily ...
Electronic Design

IGBT Gate Drive Optocoupler Maximizes Design Flexibility

An advanced 1.0 A dual output, intelligent IGBT gate drive optocoupler maximizes gate drive design scalability for motor control and power conversion applications ranging from low to high power ...
EDN

Hybrid IGBTs cut loss and power

Rohm’s RGWxx65C automotive IGBTs employ an integrated 650-V SiC Schottky barrier diode in the IGBT feedback block. This fast-recovery freewheeling diode has almost no recovery energy, thus minimal ...
Electronic Design

SPICE Model for Silicon Carbide Power MOSFET

Cree, Inc. has expanded its design-in support for the industry's first commercially-available SiC MOSFET power devices with a fully-qualified SPICE model. Using the new SPICE model, circuit designers ...