Abstract: In this paper, we have shown that the sputter etch before cobalt deposition during the silicide processing of a deep submicron CMOS device fabrication needs to be optimized in order to ...
Abstract: Through glass vias on a high-quality borosilicate glass wafer (i.e., BOROFLOAT® 33) of 500 μm in thickness were accomplished in 49% HF solution using an AZ4620 enhanced Cr/Au mask, without ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results