Tensorflow implementation for reproducing main results in the paper Self-Attention Generative Adversarial Networks by Han Zhang, Ian Goodfellow, Dimitris Metaxas, Augustus Odena. The current batch ...
Abstract: Gallium nitride (GaN) power devices are gaining traction in electrified transportation due to their low switching losses, high-frequency capability, and compact footprint, enabling higher ...
Abstract: An overview is presented of displacement damage (DD) effects, total-ionizing-dose (TID) effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs).
Some results have been hidden because they may be inaccessible to you
Show inaccessible results