Abstract: In this letter, we report a novel enhancement mode N-polar Deep Recess (NPDR) Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). Enhancement mode operation was achieved by ...
Abstract: This paper studies short polar codes as elements to design rateless polar codes based on extended parity (EP). We propose a new rateless polar codes structure, termed as Ladder model with a ...
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